t-max ? to-264 050-7078 rev c 5-2006 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt8020b2fll apt8020lfll 800v 38a 0.220 ?? ?? ? lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg popular t-max? or to-264 package fast recovery body diode power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with microsemi'spatented metal gate structure. power mos 7 r fredfet characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 19a) zero gate voltage drain current (v ds = 800v, v gs = 0v) zero gate voltage drain current (v ds = 640v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 800 0.220 250 1000 100 35 apt8020b2_lfll 800 38 152 3040 694 5.56 -55 to 150 300 3850 3000 b2fll lfll microsemi website - http://www.microsemi.com downloaded from: http:///
dynamic characteristics apt8020b2_lfll 050-7078 rev c 5-2006 source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -38a) peak diode recovery dv / dt 5 reverse recovery time(i s = -38a, di / dt = 100a/s) reverse recovery charge(i s = -38a, di / dt = 100a/s) peak recovery current(i s = -38a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 38 152 1.3 18 t j = 25c 320 t j = 125c 650 t j = 25c 1.4 t j = 125c 5.9 t j = 25c 10.8 t j = 125c 18.9 symbol r jc r ja min typ max 0.18 40 unitc/w characteristicjunction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 4.16mh, r g = 25 ? , peak i l = 38a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 38a di / dt 700a/s v r 800 t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. microsemi reserves the right to change, without notice, the specifications and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 400v i d = 38a @ 25c resistive switching v gs = 15v v dd = 400v i d = 38a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 533v, v gs = 15v i d = 38a, r g = 5 ? inductive switching @ 125c v dd = 533v v gs = 15v i d = 38a, r g = 5 ? min typ max 52001000 190195 27 130 1214 39 9 875825 1450 985 unit pf nc ns j note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.200.16 0.12 0.08 0.04 0 0.5 0.1 0.3 0.7 0.9 0.05 downloaded from: http:///
050-7078 rev c 5-2006 typical performance curves apt8020b2_lfll r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 120100 8060 40 20 0 4035 30 25 20 15 10 50 2.52.0 1.5 1.0 0.5 0.0 100 8060 40 20 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 5.5v 6v 6.5v 7v 5v v gs =15 &10 v 8v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle i d = 19a v gs = 10v normalized to v gs = 10v @ i d = 19a v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) 0.0271 0.0656 0.0860 0.00899 0.0202 0.293 dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink,sink to ambient, etc. set to zero when modeling only the case to junction. z ext downloaded from: http:///
050-7078 rev c 5-2006 apt8020b2_lfll typical performance curves i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 533v r g = 5 ? t j = 125c l = 100h e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 10 20 30 40 50 60 10 20 30 40 50 60 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 50 v dd = 533v i d = 38a t j = 125c l = 100h e on includes diode reverse recovery. t d(on) t d(off) e on e off 200180 160 140 120 100 8060 40 20 0 25002000 1500 1000 500 0 v dd = 533v r g = 5 ? t j = 125c l = 100h v dd = 533v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 800 0 10 20 30 40 50 0 50 100 150 200 250 0.3 0.5 0.7 0.9 1.1 1.3 1.5 152100 5010 1 1612 84 0 20,00010,000 1,000 100200 100 10 1 c rss c iss c oss t j =+150c t j =+25c v ds =400v v ds =160v v ds =640v i d = 38a t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms 1ms 100s 100 8060 40 20 0 60005000 4000 3000 2000 1000 0 downloaded from: http:///
050-7078 rev c 5-2006 typical performance curves apt8020b2_lfll figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions i d d.u.t. v ds figure 20, inductive switching test circuit v dd g apt30df100 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline to-264 (l) package outline drain current drain voltage gate voltage t j 125c switching energy 10% t d(on) 90% 5% t r 5% 10% switching energy drain current drain voltage gate voltage t j 125c 10% 0 t d(off) 90% 90% t f microsemis products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. downloaded from: http:///
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